
Aluminium SMD Electrolytic Capacitors ▏85 ℃ ▏ Minimum Leakage ▏CAHZ (2)
Aluminium SMD Electrolytic Capacitors ▏85 ℃ ▏ Minimum Leakage ▏CAHZ
PARS
Vertical chip type miniaturized for 5.5mm, princeps capacitors
Humilis current ultrices
RoHS morigeratus
Vertical chip type miniaturized for 5.5mm, princeps capacitors
Humilis current ultrices
RoHS morigeratus
SPECIFICATIONS
Item | Euismod | |||||||||||||||
operating Temp. range | -40°C ~ + 85° F | |||||||||||||||
Capacitance TOLERATIO | ± 20% (120HZ, 20° F) | |||||||||||||||
Current lacus (ad 20•C) | I=0.002CV vel 0.5µA (utrum maior est) post 2 minuta, ubi C = aestimavit capacitatem in µF et V = aestimavit operationem intentionis | |||||||||||||||
Triticum dispersio vitetur
Tanδ at 120 HZ, 20° F |
aestimavit intentione | 6.3 | 10 | 16 | 25 | 35 | 50 | |||||||||
Tanδ (max) | 0.28 | 0.24 | 0.20 | 0.14 | 0.12 | 0.10 | ||||||||||
Low Temperature Characteres (apud 120Hz) | aestimavit intentione | 6.3 | 10 | 16 | 25 | 35 | 50 | |||||||||
Ratio Impedimentum maximum | CUM(-25° F) /CUM(+20° F) | 3 | 3 | 2 | 2 | 2 | 2 | |||||||||
CUM(-40° F) /CUM(+20° F) | 8 | 5 | 4 | 3 | 3 | 3 | ||||||||||
Vita Test |
Test Tempus | onus vitae | Fasciae vita | |||||||||||||
2000 days | 2000 days | |||||||||||||||
Mutare Capacitance | Intra ± 20% de valore | Intra ± 20% de valore | ||||||||||||||
Triticum dispersio vitetur | Minor quam 200% de certa valorem | Minor quam 200% de certa valorem | ||||||||||||||
Current lacus | In certa valorem | In certa valorem | ||||||||||||||
Tempestas Test | 20° F (Post rated voltage applicari 2000 horae ad
85° F |
20° F (post repono for 2000 horae ad LXXXV ° C *
sine voltage) |
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Ripple Current & Frequentia Multilpiers |
VDC(V) Freq. (HZ) | 50 | 120 | 1K | 10K up | |||||||||||
Sub 16 | 0.8 | 1.00 | 1.15 | 1.25 | ||||||||||||
25 ~ 35 | 0.8 | 1.00 | 1.25 | 1.40 | ||||||||||||
50 | 0.8 | 1.00 | 1.35 | 1.50 | ||||||||||||
Signa | JIS C 5101-1,-18 |
DIMENSIONE & LICET CRISPICO current
ratio: φ D x L(mm)
Ripple Current mA/rms at 120 HZ, 85° F
VDC
μF Contents |
6.3V (0J) | 10V (1A) | 16V (1C) | 25V (1E) | 35V (1V) | 50V (1H) | |||||||
φD x L | mA | φD x L | mA | φD x L | mA | φD x L | mA | φD x L | mA | φD x L | mA | ||
0.1 | 0R1 | 4 x 5.3 | 3 | ||||||||||
0.22 | R22 | 4 x 5.3 | 5 | ||||||||||
0.33 | R33 | 4 x 5.3 | 6 | ||||||||||
0.47 | R47 | 4 x 5.3 | 7 | ||||||||||
1 | 010 | 4 x 5.3 | 10 | ||||||||||
2.2 | 2R2 | 4 x 5.3 | 15 | ||||||||||
3.3 | 3R3 | 4 x 5.3 | 19 | ||||||||||
4.7 | 4R7 | 4 x 5.3 | 19 | 4 x 5.3 | 20 | 5 x 5.3 | 26 | ||||||
10 | 100 | 4 x 5.3 | 23 | 4 x 5.3 | 26 | 5 x 5.3 | 32 | 5 x 5.3 | 34 | 6.3 x 7.7 | 44 | ||
22 | 220 | 4 x 5.3 | 31 | 5 x 5.3 | 39 | 5 x 5.3 | 44 | 6.3 x 5.3 | 55 | 6.3 x 5.3 | 59 | ||
33 | 330 | 5 x 5.3 | 44 | 5 x 5.3 | 48 | 6.3 x 5.3 | 63 | 6.3 x 5.3 | 67 | ||||
47 | 470 | 5 x 5.3 | 52 | 6.3 x 5.3 | 67 | 6.3 x 5.3 | 75 | ||||||
100 | 101 | 6.3 x 5.3 | 89 | 6.3 x 5.3 | 98 |
PAD eros et DIAMETROS
φD | I. | A | B | C | W | P+0.2 |
4 | 5.3±0.2 | 4.3 | 4.3 | 2.0 | 0.5 ut 0.8 | 1.0 |
5 | 5.3±0.2 | 5.3 | 5.3 | 2.3 | 0.5 ut 0.8 | 1.5 |
6.3 | 5.3±0.2 | 6.6 | 6.6 | 2.7 | 0.5 ut 0.8 | 2.0 |
PARS NUMBER EXEMPLUM
CAHZ 100 M 1V TR 050053
PARS
◆ chip verticalis genus miniaturized ad 5.5mm, princeps capacitors
◆ Minimum current ultrices
◆ Manufacturer
